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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium Power Surface Mount Products
MMDF3200Z
Motorola Preferred Device
TMOS Dual N-Channel Field Effect Transistors
TM
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS RDS(on) = 0.015 OHM
WaveFETTM devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. WaveFETTM devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Zener Protected Gates Provide Electrostatic Discharge Protection * Designed to withstand 200 V Machine Model and 2000 V Human Body Model * Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Logic Level Gate Drive -- Can Be Driven by Logic ICs * Miniature SO-8 Surface Mount Package -- Saves Board Space * Diode Is Characterized for Use In Bridge Circuits * Diode Exhibits High Speed, With Soft Recovery * IDSS Specified at Elevated Temperature * Mounting Information for SO-8 Package Provided
7 8 N1-DRAIN
CASE 751-06, Style 11 SO-8
N1-Source N1-GATE 2 1 N1-SOURCE 5 6 N2-DRAIN N1-Gate N2-Source N2-Gate
1 2 3 4
8 7 6 5
N1-Drain N1-Drain N2-Drain N2-Drain
TOP VIEW
N2-GATE 4 3 N2-SOURCE
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Operating and Storage Temperature Range Symbol VDSS VDGR VGS TJ, Tstg Max 20 20 12 - 55 to 150 Unit V V V C
DEVICE MARKING
D3200 Device MMDF3200Z
ORDERING INFORMATION
Reel Size 13 Tape Width 12 mm embossed tape Quantity 4000 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
(c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997
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MMDF3200Z
MAXIMUM RATINGS (TJ = 25C unless otherwise specified) When mounted on 1 inch square (25.40 mm square) FR-4 or G-10 board (VGS = 10 V @ 10 Seconds)
Parameter Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (1) Total Power Dissipation @ TA = 25C Linear Derating Factor Thermal Resistance -- Junction to Ambient Continuous Source Current (Diode Current) Symbol ID ID IDM PD RJA IS Maximum 11.5 9.2 57.5 2.0 16 62.5 TBD Unit A A A Watts mW/C C/W A
When mounted on 1 inch square (25.40 mm square) FR-4 or G-10 board (VGS = 10 V @ Steady State)
Parameter Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (1) Total Power Dissipation @ TA = 25C Linear Derating Factor Thermal Resistance -- Junction to Ambient Continuous Source Current (Diode Current) Symbol ID ID IDM PD RJA IS Maximum 8.0 5.9 40 1.28 10.2 98 TBD Unit A A A Watts mW/C C/W A
When mounted on minimum FR-4 or G-10 board (VGS = 10 V @ Steady State)
Parameter Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 70C Drain Current -- Pulsed Drain Current (1) Total Power Dissipation @ TA = 25C Linear Derating Factor Thermal Resistance -- Junction to Ambient Continuous Source Current (Diode Current) (1) Repetitive rating; pulse width limited by maximum junction temperature. Symbol ID ID IDM PD RJA IS Maximum 7.1 5.2 35.5 0.75 6.0 166 TBD Unit A A A Watts mW/C C/W A
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Motorola TMOS Power MOSFET Transistor Device Data
MMDF3200Z
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 11.5 Adc) (VGS = 2.5 Vdc, ID = 5.9 Adc) Forward Transconductance (VDS = 8.0 Vdc, ID = 3.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge See Figure 8 ( (VDS = 16 Vd , ID = 11 5 Ad , Vdc, 11.5 Adc, VGS = 4.5 Vdc) Vdc, 11.5 Adc, (VDD = 16 Vd ID = 11 5 Ad VGS = 4.5 Vdc, 4 5 Vdc RG = 10 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time ( (IS = 11.5 Adc, VGS = 0 Vdc, 11 5 Ad , Vd , dIS/dt = 100 A/s) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (IS = 11.5 Adc, VGS = 0 Vdc) (IS = 11.5 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR -- -- -- -- -- -- TBD TBD TBD TBD TBD TBD 1.2 -- -- -- -- -- C Vdc ns -- -- -- -- -- -- -- -- TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD -- -- -- nC ns (VDS = 15 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- TBD TBD TBD TBD TBD TBD pF VGS(th) 0.5 -- RDS(on) -- -- gFS 5.0 TBD TBD TBD 15 25 -- Mhos 0.8 TBD 1.2 -- Vdc mV/C m V(BR)DSS 20 -- IDSS -- -- IGSS -- -- -- TBD 1.0 10 1.0 -- TBD -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
mA
Motorola TMOS Power MOSFET Transistor Device Data
3
MMDF3200Z
PACKAGE DIMENSIONS
A
8
D
5
C
E
1 4
H
0.25
M
B
M
h B C e A
SEATING PLANE
X 45 _
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_
q
L 0.10 A1 B 0.25
M
CB
S
A
S
q
CASE 751-06 ISSUE T
STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8.
SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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Motorola TMOS Power MOSFET Transistor MMDF3200Z/D Device Data

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